Keynotes

 

Victor Veliadis
PowerAmerica/NCSU

Topic: Accelerating SiC Commercialization and Barriers to Overcome

 

Tat-Sing Paul Chow
Rensselaer Polytechnic Institute

Topic: Smart Power Devices and ICs with Wide and Ultrawide Bandgap Semiconductors

 

Jih-Sheng Lai
Virginia Polytechnic Institute and State University
National Yang Ming Chiao Tung University

Topic: Outlook of Wide Bandgap Semiconductor Devices – From Application Aspects

 

Hirofumi Akagi
Tokyo Institute of Technology

Topic: Applications of SiC-MOSFET Modules to High-Power (100 kW or Higher) Dual-Active-Bridge (DAB) Converters

 

Tsuyoshi FUNAKI
Osaka university

Topic: Packaging and components for wide band gap semiconductor power device application

 

Manabu Yanagihara
Power Stage Product Design Division, LSI Business Unit, Rohm Co., Ltd.

Topic: Enhancement-Mode AlGaN/GaN HEMTs With High Rated Forward Gate-Source Voltages

 

Chuck Huang
WIN Semiconductors Corp., Taiwan

Topic: The Challenges and Solutions RF GaN

 

Hiroshi Kono
Advanced Semiconductor Device Development Center, Semiconductor Division, Toshiba Electronic devices & Storage corporation

Topic: Performance and reliability improvement in Silicon carbide power devices.

 

Shyh-Chiang Shen
Vanguard International Semiconductor, Corp.

Topic: 8-inch GaN HEMT Technology for Power Electronic Applications

 

Masayoshi Tarutani
Mitsubishi Electric Corporation

Topic: Technology Trends of Si and SiC Chips and Modules for Power Electronics Application